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Creating excitons in II-VI quantum wells with large binding energies
The wide bandgap II-VI semiconductors have unique properties which allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E/sub 1s/spl rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells...
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| creator | Urbaszek, B. Morhain, C. Bradford, C. O'Donnell, C.B. Telfer, S.A. Tang, X. Balocchi, A. Prior, K.A. Cavenett, B.C. Townsley, C.M. Nicholas, R.J. |
| description | The wide bandgap II-VI semiconductors have unique properties which allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E/sub 1s/spl rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures. |
| doi_str_mv | 10.1109/COMMAD.2000.1022894 |
| format | conference_proceeding |
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High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.</description><identifier>ISBN: 9780780366985</identifier><identifier>ISBN: 0780366980</identifier><identifier>DOI: 10.1109/COMMAD.2000.1022894</identifier><language>eng</language><publisher>IEEE</publisher><subject>Energy measurement ; Excitons ; Magnetic field measurement ; Optical scattering ; Particle scattering ; Phonons ; Photonic band gap ; Temperature dependence ; Temperature measurement ; Zinc compounds</subject><ispartof>COMMAD 2000 Proceedings. 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Conference on Optoelectronic and Microelectronic Materials and Devices</title><addtitle>COMMAD</addtitle><description>The wide bandgap II-VI semiconductors have unique properties which allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E/sub 1s/spl rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.</description><subject>Energy measurement</subject><subject>Excitons</subject><subject>Magnetic field measurement</subject><subject>Optical scattering</subject><subject>Particle scattering</subject><subject>Phonons</subject><subject>Photonic band gap</subject><subject>Temperature dependence</subject><subject>Temperature measurement</subject><subject>Zinc compounds</subject><isbn>9780780366985</isbn><isbn>0780366980</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj8tqwzAURAWl0JL6C7LRDziVrh6WlsHpw5CQTeg2yNa1o-CoreWQ9u9rmsDAwHBmYAiZc7bgnNnncrvZLFcLYGwKGICx8o5ktjBsktDaGvVAspSOE8Ckkrqwj2RVDujGEDuKP00YP2OiIdKqyj8q-n12cTyf6AX7PtFLGA-0d0OHtA7R_1ciDl3A9ETuW9cnzG4-I7vXl135nq-3b1W5XOeBF2rMa-EBGDZOA4DQUnNUKI0W1jSNMg36lrfILRceARn4WnEwhWnBeWaMmJH5dTYg4v5rCCc3_O5vV8Uf0VhJdw</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Urbaszek, B.</creator><creator>Morhain, C.</creator><creator>Bradford, C.</creator><creator>O'Donnell, C.B.</creator><creator>Telfer, S.A.</creator><creator>Tang, X.</creator><creator>Balocchi, A.</creator><creator>Prior, K.A.</creator><creator>Cavenett, B.C.</creator><creator>Townsley, C.M.</creator><creator>Nicholas, R.J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>Creating excitons in II-VI quantum wells with large binding energies</title><author>Urbaszek, B. ; Morhain, C. ; Bradford, C. ; O'Donnell, C.B. ; Telfer, S.A. ; Tang, X. ; Balocchi, A. ; Prior, K.A. ; Cavenett, B.C. ; Townsley, C.M. ; Nicholas, R.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-b3d220eca622236461e5e486398cc58cedf1fe1913de2e02db512878f2ad0883</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Energy measurement</topic><topic>Excitons</topic><topic>Magnetic field measurement</topic><topic>Optical scattering</topic><topic>Particle scattering</topic><topic>Phonons</topic><topic>Photonic band gap</topic><topic>Temperature dependence</topic><topic>Temperature measurement</topic><topic>Zinc compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Urbaszek, B.</creatorcontrib><creatorcontrib>Morhain, C.</creatorcontrib><creatorcontrib>Bradford, C.</creatorcontrib><creatorcontrib>O'Donnell, C.B.</creatorcontrib><creatorcontrib>Telfer, S.A.</creatorcontrib><creatorcontrib>Tang, X.</creatorcontrib><creatorcontrib>Balocchi, A.</creatorcontrib><creatorcontrib>Prior, K.A.</creatorcontrib><creatorcontrib>Cavenett, B.C.</creatorcontrib><creatorcontrib>Townsley, C.M.</creatorcontrib><creatorcontrib>Nicholas, R.J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Urbaszek, B.</au><au>Morhain, C.</au><au>Bradford, C.</au><au>O'Donnell, C.B.</au><au>Telfer, S.A.</au><au>Tang, X.</au><au>Balocchi, A.</au><au>Prior, K.A.</au><au>Cavenett, B.C.</au><au>Townsley, C.M.</au><au>Nicholas, R.J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Creating excitons in II-VI quantum wells with large binding energies</atitle><btitle>COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices</btitle><stitle>COMMAD</stitle><date>2000</date><risdate>2000</risdate><spage>73</spage><epage>80</epage><pages>73-80</pages><isbn>9780780366985</isbn><isbn>0780366980</isbn><abstract>The wide bandgap II-VI semiconductors have unique properties which allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E/sub 1s/spl rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. 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| identifier | ISBN: 9780780366985 |
| ispartof | COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices, 2000, p.73-80 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Energy measurement Excitons Magnetic field measurement Optical scattering Particle scattering Phonons Photonic band gap Temperature dependence Temperature measurement Zinc compounds |
| title | Creating excitons in II-VI quantum wells with large binding energies |
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