Measurement of optical absorption in semiconductor layer structures

We describe a simple method based on photoluminescence, which allowed us to determine the absorption spectra of InAs/InAlAs quantum dots at low temperatures. The method is convenient when other, more conventional absorption measurements are not feasible, and the sample emits luminescence.

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Bibliographic Details
Main Authors: Dao, L.V., Gal, M., Koo, B.H., Makino, H., Yao, T.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Luminescence
Optical scattering
Substrates
Online Access:Request full text
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Description
Summary:We describe a simple method based on photoluminescence, which allowed us to determine the absorption spectra of InAs/InAlAs quantum dots at low temperatures. The method is convenient when other, more conventional absorption measurements are not feasible, and the sample emits luminescence.
DOI:10.1109/COMMAD.2000.1022961