Enhancing High-Voltage Stability of CsPbBr₃ Radiation Detectors Through Surface Treatment and Electrode Replacement

CsPbBr3 represents a promising candidate for room-temperature semiconductor radiation detection. However, under high bias voltages, the high voltage stability of the detector decreases and baseline noise increases due to surface ion migration and electrode reactions. To address these challenges, we...

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Bibliographic Details
Published in:IEEE electron device letters 2023-10, Vol.44 (10), p.1620-1623
Main Authors: Jin, Tong, Liu, Yuting, Xiong, Yan, Pang, Jincong, Wu, Haodi, Yuan, Shunsheng, Xu, Ling, Zheng, Zhiping, Tang, Jiang, Niu, Guangda
Format: Article
Language:English
Subjects:
Carbon
Carrier transport
Crystals
Current carriers
Electrodes
Gamma rays
gamma-ray detectors
High voltages
High-voltage techniques
Ion migration
Ions
Leakage current
Photoconductivity
Radiation detectors
Room temperature
Schottky contact
Semiconductor radiation detectors
semiconductor-metal interfaces
Single crystals
Surface stability
Surface treatment
Thermal stability
Transport properties
Voltage stability
X-ray detectors
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Summary:CsPbBr3 represents a promising candidate for room-temperature semiconductor radiation detection. However, under high bias voltages, the high voltage stability of the detector decreases and baseline noise increases due to surface ion migration and electrode reactions. To address these challenges, we present a methodology designed to enhance the high-voltage stability of CsPbBr3 single crystals. This involves employing surface polishing and passivation to suppress surface ion migration, coupled with the replacement of the metal anode electrode with a carbon electrode, renowned for its inertness. These measures effectively curtail the amplification of leakage current and reduction in stability triggered by the reaction between bromide ions and the metal electrode. Moreover, we conduct an evaluation of the rectification characteristics, photo-detection response, and charge carrier transport properties of the resultant C-CsPbBr3-Bi Schottky-type devices. These devices demonstrated superior capabilities in X-ray detection and gamma spectral detection. The findings significantly contribute to the ongoing development of room-temperature semiconductor radiation detectors for X/gamma-ray applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3311473