Unveiling the Potential of Bismuth Oxy-Iodide (BiOI)-Based Photovoltaic Device for Indoor Light Harvesting

Indoor photovoltaics (IPVs) have piqued the interest of many because of their potential to power small and portable electronics and photonic devices. This work investigates one of the exemplary perovskite inspired materials (PIMs), bismuth oxy-iodide (BiOI). In order to explore the potential of BiOI...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-11, Vol.70 (11), p.5690-5695
Main Authors: Manjhi, Sarita, Siddharth, Gaurav, Pandey, Sushil K., Sengar, Brajendra S., Dwivedi, Praveen, Garg, Vivek
Format: Article
Language:English
Subjects:
Absorbers
Bismuth
Charge carriers
Defects
Energy conversion efficiency
Fluorescent lamps
Illumination
Indium tin oxides
Indoor environments
Indoor photovoltaics (IPVs)
Lead
Light sources
Luminous intensity
Performance evaluation
Perovskites
Photonic band gap
Photovoltaic cells
Photovoltaic systems
Portable equipment
Shunt resistance
solar cells
Valence band
Zinc oxide
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Summary:Indoor photovoltaics (IPVs) have piqued the interest of many because of their potential to power small and portable electronics and photonic devices. This work investigates one of the exemplary perovskite inspired materials (PIMs), bismuth oxy-iodide (BiOI). In order to explore the potential of BiOI in the indoor environment, the baseline model of BiOI device [indium tin oxide (ITO)/NiOx/BiOI/ZnO/Contact] is developed using the experimental results of a recent study with a power conversion efficiency (PCE) of 4%. The performance of the proposed device is fine-tuned by investigating the effect of: 1) absorber thickness and defect density and 2) valence band offset (VBO) between the hole transport layer (HTL) and absorber interface (NiOx/BiOI) along with the interface defect density. Furthermore, the series and shunt resistance of the device is optimized. Additionally, the performance of the optimized device is investigated under different WLED light intensities. Finally, after optimizing the device under WLED illumination, the best performance parameters achieved are {J} _{\text {sc}} : 1.83 mA/cm2, {V} _{\text {oc}} : 1.33 V, FF: 85.91%, and PCE: 40%. Moreover, the optimized device performance under different indoor light sources: WLED, halogen, and compact fluorescent lamps (CFLs), has been performed to estimate the performance under widely utilized lighting sources.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3308919