Case Study On Identification Of Implant Related Defect With Junction Stain Technique

Conventional failure analysis methods such as SEM, FIB and TEM are the commonly used techniques in revealing root cause of the failure. However, analysis on implantation related defect will be difficult with conventional failure analysis techniques. Wet chemical junction stain technique is an effect...

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Bibliographic Details
Main Authors: Yip, K. H., Ang, P. C., Wong, H. L., Lew, L. L., Mo, Z. Q.
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
Failure analysis
Implants
Integrated circuits
Ion implantation
Junctions
MOS devices
Online Access:Request full text
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Summary:Conventional failure analysis methods such as SEM, FIB and TEM are the commonly used techniques in revealing root cause of the failure. However, analysis on implantation related defect will be difficult with conventional failure analysis techniques. Wet chemical junction stain technique is an effective analysis method for ion implantation related defect. Two case study with ion implantation related failure were presented and discussed in this paper. Wet chemical junction stain with mixture of HNO3/HF/CH3COOH successfully reveal the root cause for both Electrical testing failure of NMOS I_on current low and Deep Nwell to Deep Nwell low breakdown voltage. Base on the failure analysis finding, effective corrective action can be implemented to prevent similar issues from reoccurrence.
ISSN:1946-1550
DOI:10.1109/IPFA58228.2023.10249044