Novel High-Performance SIW Cavity-Based Switching Structures

In this article, novel architectures for high-speed substrate integrated waveguide (SIW) filtering switches with high-power handling are presented. A four-port filtering double-pole, double-throw (DPDT) switch and a three-port filtering routing switch are demonstrated as a proof-of-concept. For both...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2024-01, Vol.72 (1), p.1-13
Main Authors: El-Gendy, Kareem H., Khater, Mohammad Abu, Abdelaziem, Islam H., Abdalla, Mahmoud A., Peroulis, Dimitrios, Hagag, Mohamed F.
Format: Article
Language:English
Subjects:
Double-pole double-throw (DPDT)
Equivalent circuits
evanescent-mode cavity
Filtering
Filtration
high-power switch
high-speed switch
Holes
Insertion loss
Loss measurement
Resonant frequency
Routing
substrate integrated waveguide (SIW)
Substrate integrated waveguides
Switches
Switching
Switching circuits
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Description
Summary:In this article, novel architectures for high-speed substrate integrated waveguide (SIW) filtering switches with high-power handling are presented. A four-port filtering double-pole, double-throw (DPDT) switch and a three-port filtering routing switch are demonstrated as a proof-of-concept. For both switches, the structure consists of a main switching circular cavity with concentric posts. These posts enable the excitation of multiple resonant modes. The resonant modes are aligned in frequency using loading capacitances. p-i-n-diodes are used to short loading posts. Consequently, the generated fields interfere constructively and destructively at the output ports. Concept-proving structures are designed, implemented, and measured. For the SIW-DPDT switch, a measured insertion loss and isolation of 2.95 and 26 dB are achieved, respectively, at 7.4 GHz. Furthermore, a 2.98 and 30 dB measured insertion loss and isolation are obtained for the SIW-routing switch, respectively, at 7.7 GHz. The measured insertion losses include the losses of the filtering cavities. The proposed structures share the same switching technique. As a result, the power handling measurements are performed only for the routing switch, which is measured to handle 40 dBm of input power. Also, the employed switching technique is demonstrated to exhibit a switching speed of less than 80 ns.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2023.3315793