A 400 W Continuous Wave Power Amplifier in L-Band with single GaN Transistor

This paper presents the design, manufacturing and testing of a continuous-wave 400 W Power amplifier in L-Band. The device is based on a single GaN high power transistor mounted in a connectorized module. The amplifier demonstrates an output power higher than 400 W at 3 dB compression. This is the h...

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Bibliographic Details
Main Authors: Sugumaran, Bharathidasan, Silva, Oliver, Vega, Felix, Kasmi, Chaouki
Format: Conference Proceeding
Language:English
Subjects:
HEMTs
L-band
Power amplifiers
Power transistors
Prototypes
Transistors
Wave power
Online Access:Request full text
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Summary:This paper presents the design, manufacturing and testing of a continuous-wave 400 W Power amplifier in L-Band. The device is based on a single GaN high power transistor mounted in a connectorized module. The amplifier demonstrates an output power higher than 400 W at 3 dB compression. This is the highest power achieved by a single device amplifier reported on L-Band to date. Moreover, the measured gain is 15 dB and PAE is 72%.
ISSN:2642-4339
DOI:10.23919/URSIGASS57860.2023.10265451