ePCM reliability improvement through active material carbon implantation

Embedded Phase Change Memories (ePCM) based on Ge-rich Ge 2 Sb 2 Te 5 alloy have been proven to guarantee code integrity after soldering thermal profile and data retention in extended temperature range for automotive application. A characteristic of this kind of alloy is Ge segregation during the fa...

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Bibliographic Details
Main Authors: Palumbo, Elisabetta, Motta, Alessandro, Petroni, Elisa, Gallinari, Daniele, Gilardini, Annalisa, Galbiati, Amos, Borghi, Massimo, Annunziata, Roberto, Redaelli, Andrea
Format: Conference Proceeding
Language:English
Subjects:
carbon implantation
Chemical analysis
doping
endurance
ePCM
Ge segregation
Ge-rich GST
Germanium
Materials reliability
Phase change materials
Phase change memory
Phase-Change
reliability
retention
Semiconductor device reliability
Temperature distribution
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Summary:Embedded Phase Change Memories (ePCM) based on Ge-rich Ge 2 Sb 2 Te 5 alloy have been proven to guarantee code integrity after soldering thermal profile and data retention in extended temperature range for automotive application. A characteristic of this kind of alloy is Ge segregation during the fabrication process. This paper shows how carbon implantation can influence this phenomenon on a process not optimized to contain Ge segregation leading to a more homogeneous and stable alloy. This effect was demonstrated by detailed physical and chemical analysis and the impact on electrical performances was investigated at intrinsic cell level and on a 20Mbit array.
ISSN:2378-6558
DOI:10.1109/ESSDERC59256.2023.10268520