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Ion implantation for semiconductor lasers
Ion implantation for the electrical isolation of semiconductor lasers is a commonly applied technique for multi-quantum well (MQW) lasers, as well as for the deep electrical isolation for quantum cascade lasers. In this paper, we present in detail the theoretical simulations of ion implantation proc...
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creator | Szerling, Anna Kozubal, Maciej Gebski, Marcin Pagowska, Karolina Michalowski, Pawel Kosiel, Kamil Ekielski, Marek Czyszanowski, Tomasz |
description | Ion implantation for the electrical isolation of semiconductor lasers is a commonly applied technique for multi-quantum well (MQW) lasers, as well as for the deep electrical isolation for quantum cascade lasers. In this paper, we present in detail the theoretical simulations of ion implantation processes for deep electrical isolation of AlGaAs/GaAs quantum cascade and for vertical-cavity surface-emitting laser structures. It will be shown the planning steps for establishing the optimal conditions for the proton implantation processes, which led to the choice of the ion energy and type of masking layer. They employed the simulations of distributions of implanted protons and vacancies, formed after the irradiation into the semiconductors as GaAs, AlGaAs etc. and different types of masking layers. The profiles were calculated from the data simulated by the TRansport in Matter code. It will be presented the design process and verification of scheme for AlGaAs/GaAs quantum cascade and vertical-cavity surface-emitting laser structures. |
doi_str_mv | 10.1109/NUSOD59562.2023.10273557 |
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In this paper, we present in detail the theoretical simulations of ion implantation processes for deep electrical isolation of AlGaAs/GaAs quantum cascade and for vertical-cavity surface-emitting laser structures. It will be shown the planning steps for establishing the optimal conditions for the proton implantation processes, which led to the choice of the ion energy and type of masking layer. They employed the simulations of distributions of implanted protons and vacancies, formed after the irradiation into the semiconductors as GaAs, AlGaAs etc. and different types of masking layers. The profiles were calculated from the data simulated by the TRansport in Matter code. It will be presented the design process and verification of scheme for AlGaAs/GaAs quantum cascade and vertical-cavity surface-emitting laser structures.</description><identifier>EISSN: 2158-3242</identifier><identifier>EISBN: 9798350314298</identifier><identifier>DOI: 10.1109/NUSOD59562.2023.10273557</identifier><language>eng</language><publisher>IEEE</publisher><subject>hydrogen implantation ; Ion implantation ; Laser theory ; Planning ; Protons ; Quantum cascade lasers ; Quantum mechanics ; Radiation effects ; TRIM code ; vacancies</subject><ispartof>2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2023, p.39-40</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10273557$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,27902,54530,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10273557$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Szerling, Anna</creatorcontrib><creatorcontrib>Kozubal, Maciej</creatorcontrib><creatorcontrib>Gebski, Marcin</creatorcontrib><creatorcontrib>Pagowska, Karolina</creatorcontrib><creatorcontrib>Michalowski, Pawel</creatorcontrib><creatorcontrib>Kosiel, Kamil</creatorcontrib><creatorcontrib>Ekielski, Marek</creatorcontrib><creatorcontrib>Czyszanowski, Tomasz</creatorcontrib><title>Ion implantation for semiconductor lasers</title><title>2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)</title><addtitle>NUSOD</addtitle><description>Ion implantation for the electrical isolation of semiconductor lasers is a commonly applied technique for multi-quantum well (MQW) lasers, as well as for the deep electrical isolation for quantum cascade lasers. 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It will be presented the design process and verification of scheme for AlGaAs/GaAs quantum cascade and vertical-cavity surface-emitting laser structures.</description><subject>hydrogen implantation</subject><subject>Ion implantation</subject><subject>Laser theory</subject><subject>Planning</subject><subject>Protons</subject><subject>Quantum cascade lasers</subject><subject>Quantum mechanics</subject><subject>Radiation effects</subject><subject>TRIM code</subject><subject>vacancies</subject><issn>2158-3242</issn><isbn>9798350314298</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2023</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo1j0lLw0AYQEdBsNT8Aw-5ekj8llmPUrdCsQftuUySGRjJUjLx4L-3oJ4e7_LgCVEi1Ijg7t8O7_tH5ZSmmoC4RiDDSpkLUTjjLCtglOTspVgRKlsxSboWRc6fAMAELLVeibvtNJZpOPV-XPySzhKnucxhSO00dl_tcrbe5zDnG3EVfZ9D8ce1ODw_fWxeq93-Zbt52FUJ0S2VjrqVtmvQRe08RS1NCOS6ANJE6DwEJYPyxvjYaKMQGx0dNcyxjdpqw2tx-9tNIYTjaU6Dn7-P_3f8A0SOREU</recordid><startdate>20230918</startdate><enddate>20230918</enddate><creator>Szerling, Anna</creator><creator>Kozubal, Maciej</creator><creator>Gebski, Marcin</creator><creator>Pagowska, Karolina</creator><creator>Michalowski, Pawel</creator><creator>Kosiel, Kamil</creator><creator>Ekielski, Marek</creator><creator>Czyszanowski, Tomasz</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>20230918</creationdate><title>Ion implantation for semiconductor lasers</title><author>Szerling, Anna ; Kozubal, Maciej ; Gebski, Marcin ; Pagowska, Karolina ; Michalowski, Pawel ; Kosiel, Kamil ; Ekielski, Marek ; Czyszanowski, Tomasz</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i119t-6f6c48db19f69a2f647ee29de047f0da0e54e5a77afb67511b6f92b33fcf68673</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2023</creationdate><topic>hydrogen implantation</topic><topic>Ion implantation</topic><topic>Laser theory</topic><topic>Planning</topic><topic>Protons</topic><topic>Quantum cascade lasers</topic><topic>Quantum mechanics</topic><topic>Radiation effects</topic><topic>TRIM code</topic><topic>vacancies</topic><toplevel>online_resources</toplevel><creatorcontrib>Szerling, Anna</creatorcontrib><creatorcontrib>Kozubal, Maciej</creatorcontrib><creatorcontrib>Gebski, Marcin</creatorcontrib><creatorcontrib>Pagowska, Karolina</creatorcontrib><creatorcontrib>Michalowski, Pawel</creatorcontrib><creatorcontrib>Kosiel, Kamil</creatorcontrib><creatorcontrib>Ekielski, Marek</creatorcontrib><creatorcontrib>Czyszanowski, Tomasz</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Szerling, Anna</au><au>Kozubal, Maciej</au><au>Gebski, Marcin</au><au>Pagowska, Karolina</au><au>Michalowski, Pawel</au><au>Kosiel, Kamil</au><au>Ekielski, Marek</au><au>Czyszanowski, Tomasz</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Ion implantation for semiconductor lasers</atitle><btitle>2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)</btitle><stitle>NUSOD</stitle><date>2023-09-18</date><risdate>2023</risdate><spage>39</spage><epage>40</epage><pages>39-40</pages><eissn>2158-3242</eissn><eisbn>9798350314298</eisbn><abstract>Ion implantation for the electrical isolation of semiconductor lasers is a commonly applied technique for multi-quantum well (MQW) lasers, as well as for the deep electrical isolation for quantum cascade lasers. In this paper, we present in detail the theoretical simulations of ion implantation processes for deep electrical isolation of AlGaAs/GaAs quantum cascade and for vertical-cavity surface-emitting laser structures. It will be shown the planning steps for establishing the optimal conditions for the proton implantation processes, which led to the choice of the ion energy and type of masking layer. They employed the simulations of distributions of implanted protons and vacancies, formed after the irradiation into the semiconductors as GaAs, AlGaAs etc. and different types of masking layers. The profiles were calculated from the data simulated by the TRansport in Matter code. It will be presented the design process and verification of scheme for AlGaAs/GaAs quantum cascade and vertical-cavity surface-emitting laser structures.</abstract><pub>IEEE</pub><doi>10.1109/NUSOD59562.2023.10273557</doi><tpages>2</tpages></addata></record> |
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subjects | hydrogen implantation Ion implantation Laser theory Planning Protons Quantum cascade lasers Quantum mechanics Radiation effects TRIM code vacancies |
title | Ion implantation for semiconductor lasers |
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