A 5.2 GHz Inductorless CNTFET-Based Amplifier Design Feasible for On-Chip Implementation

• Published in: IEEE transactions on nanotechnology 2023, Vol.22, p.679-683
• Main Authors: Valdez-Sandoval, Leslie M., Cid-Delgado, Armando, Pacheco-Sanchez, Anibal, Aguilar, Mauro A. Enciso, Annamalai, Manojkumar, Schroter, Michael, Ramirez-Garcia, Eloy
• Format: Article
• Language: English
• Subjects: Amplification; Amplifier design; Amplifiers; Carbon nanotubes; Circuit stability; Circuits; CNTFET-based gain amplifier; CNTFETs; compact modeling; Fabrication; Field effect transistors; Gain; linearity; Logic gates; Performance evaluation; Power consumption; Power gain; Radio frequency; Semiconductor devices; Third order intercept point; Topology
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2023.3322966

The design of single- and double-stage carbon nanotube field-effect transistor (CNTFET) based power gain amplifiers using an experimentally-calibrated compact model of an advanced CNTFET technology is presented. Operating at a frequency of 5.2 GHz, the designed single- and double-stage amplifiers achieve competitive gain and linear performance whereas maintining low-power consumption in comparison to incumbent Si-based amplifier circuits. The employed inductorless amplifier topology eases the implementation in a monolithic process. Furthermore, the single-stage amplifier achieves an outstanding input(output)-third-order intercept point {IIP}_{3} = {\rm {4.7(6.6)dBm}} . Moreover, the double-stage CNTFET-based amplifier circuit reaches a competitive gain of S_{21}\sim {\rm {12.5 dB}} among results reported in literature. Finally, the obtained results demonstrate that CNTFET technology is a credible contender for implementing RF amplifier circuits suitable for developing RF systems.