GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications

We demonstrate threshold switching behaviors with working temperatures up to 500 °C based on GaN vertical p-n diodes, and these devices survived a passive test in a simulated Venus environment (460 °C, 94 bar, CO2 gas flow) for ten days. This is realized via interface engineering through an etch-the...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2024-03, Vol.71 (3), p.1641-1645
Main Authors: Fu, Kai, Luo, Shisong, Fu, Houqiang, Hatch, Kevin, Alugubelli, Shanthan Reddy, Liu, Hanxiao, Li, Tao, Xu, Mingfei, Mei, Zhaobo, He, Ziyi, Zhou, Jingan, Chang, Cheng, Ponce, Fernando A., Nemanich, Robert, Zhao, Yuji
Format: Article
Language:English
Subjects:
Behavioral sciences
Capacitance
Electron traps
Gallium nitrides
Gallium oxides
GaN
Gas flow
Ga₂O
harsh environment
High temperature
interface engineering
Interlayers
Light emitting diodes
memory
Memory devices
p-n diodes
Switches
Switching
threshold switching
Threshold voltage
Venus
wide bandgap semiconductor
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Summary:We demonstrate threshold switching behaviors with working temperatures up to 500 °C based on GaN vertical p-n diodes, and these devices survived a passive test in a simulated Venus environment (460 °C, 94 bar, CO2 gas flow) for ten days. This is realized via interface engineering through an etch-then-regrow process combination with a Ga2O3 interlayer. It is hypothesized the traps in the interfacial layer can form/rupture a conductive path by trapping/detrapping electrons/holes, which are responsible for the observed threshold switching behaviors. To the best of our knowledge, this is the first demonstration of two-terminal threshold-switching memory devices under such high temperatures. These results can serve as a critical reference for the future development of GaN-based memory devices for harsh environment applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3321562