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Parametric synthesis of microwave FET oscillators

A nonlinear FET model, including approximating voltage dependencies of drain current, gate-source capacitance and resistance is considered. The technique based on the harmonic balance for the calculation of stationary oscillation is described. A new parametric synthesis method of microwave oscillato...

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Bibliographic Details
Main Authors: Bochkov, V.V., Dubrovsky, V.N., Karasev, A.S.
Format: Conference Proceeding
Language:English
Subjects:
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Summary:A nonlinear FET model, including approximating voltage dependencies of drain current, gate-source capacitance and resistance is considered. The technique based on the harmonic balance for the calculation of stationary oscillation is described. A new parametric synthesis method of microwave oscillator with "star-like" structure is proposed. This method enables us to get automatically the necessary frequency and power. The PC program for the design of integrated microwave FET oscillators is described.
DOI:10.1109/OCCSC.2002.1029119