Temperature Dependence of the Conductivity of InSb Measured by Terahertz Time-Domain Spectroscopy

In this study, we characterized the temperature-dependent electrical conductivity properties of undoped and lightly doped bulk InSb samples using terahertz time-domain spectroscopy. We obtained the permittivity spectra at low temperatures and analyzed the carrier density and mobility by fitting the...

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Bibliographic Details
Main Authors: Liu, Shuang, Agulto, Verdad C., Iwamoto, Toshiyuki, Kato, Kosaku, Mag-Usara, Valynn Katrine, Ota, Masato, Dolas, Shamika, Newman, Nathan, Nedelcu, Liviu, Tani, Masahiko, Yoshimura, Masashi, Nakajima, Makoto
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier density
Conductivity
Fitting
Spectroscopy
Temperature
Temperature dependence
Temperature measurement
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Summary:In this study, we characterized the temperature-dependent electrical conductivity properties of undoped and lightly doped bulk InSb samples using terahertz time-domain spectroscopy. We obtained the permittivity spectra at low temperatures and analyzed the carrier density and mobility by fitting the spectra to the Drude model. Based on our analysis, we show the temperature dependence of the optical constants and explain the underlying physical mechanisms for the observed behavior. Our results provide important insights into the electronic properties of InSb.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz57677.2023.10299341