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Temperature Dependence of the Conductivity of InSb Measured by Terahertz Time-Domain Spectroscopy

In this study, we characterized the temperature-dependent electrical conductivity properties of undoped and lightly doped bulk InSb samples using terahertz time-domain spectroscopy. We obtained the permittivity spectra at low temperatures and analyzed the carrier density and mobility by fitting the...

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Main Authors: Liu, Shuang, Agulto, Verdad C., Iwamoto, Toshiyuki, Kato, Kosaku, Mag-Usara, Valynn Katrine, Ota, Masato, Dolas, Shamika, Newman, Nathan, Nedelcu, Liviu, Tani, Masahiko, Yoshimura, Masashi, Nakajima, Makoto
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creator Liu, Shuang
Agulto, Verdad C.
Iwamoto, Toshiyuki
Kato, Kosaku
Mag-Usara, Valynn Katrine
Ota, Masato
Dolas, Shamika
Newman, Nathan
Nedelcu, Liviu
Tani, Masahiko
Yoshimura, Masashi
Nakajima, Makoto
description In this study, we characterized the temperature-dependent electrical conductivity properties of undoped and lightly doped bulk InSb samples using terahertz time-domain spectroscopy. We obtained the permittivity spectra at low temperatures and analyzed the carrier density and mobility by fitting the spectra to the Drude model. Based on our analysis, we show the temperature dependence of the optical constants and explain the underlying physical mechanisms for the observed behavior. Our results provide important insights into the electronic properties of InSb.
doi_str_mv 10.1109/IRMMW-THz57677.2023.10299341
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language eng
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subjects Charge carrier density
Conductivity
Fitting
Spectroscopy
Temperature
Temperature dependence
Temperature measurement
title Temperature Dependence of the Conductivity of InSb Measured by Terahertz Time-Domain Spectroscopy
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