Modeling of a SiC Drift Step Recovery Diode Stack in Silvaco Atlas

This paper details the development of a Silvaco Atlas model to simulate a high voltage SiC Drift Step Recovery Diode (DSRD) stack. The model developed is based on the DC and transient parameters found from characterizing the device. The model is benchmarked using atlas mixed-mode simulations against...

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Bibliographic Details
Main Authors: Graves, David Z., Bilbao, Argenis V., Bayne, Stephen B., Schrock, Emily A., Miller, Seth, Phillips, James
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Benchmark testing
Drift Step Recovery Diodes
High-voltage techniques
Integrated circuit modeling
Pulsed Power
Semiconductors
Silicon
Silicon carbide
Silvaco Atlas
Steady-state
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Summary:This paper details the development of a Silvaco Atlas model to simulate a high voltage SiC Drift Step Recovery Diode (DSRD) stack. The model developed is based on the DC and transient parameters found from characterizing the device. The model is benchmarked using atlas mixed-mode simulations against different physical testbeds for a complete comparative analysis. The successful development of the model allows greater insight into the operations of the device stack and faster optimization of pulsed power generators where the device is utilized.
ISSN:2158-4923
DOI:10.1109/PPC47928.2023.10310710