Scanning probe lithography with real time position control interferometer

We have constructed an integrated SPM and an xy-position interferometer to properly control the dimensions of the lithography patterns. The tracking error of xy-dimensional positioning system is about 2 nm accuracy and the positioning resolution could reach 0.1 nm. The scanning probe microscope (SPM...

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Bibliographic Details
Main Authors: Yao, B.C., Chien, F.S.-S., Chen, S., Lui, P.K.-W., Peng, G.S.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Interferometric lithography
Laser feedback
Laser stability
Optical interferometry
Oxidation
Position control
Prototypes
Scanning probe microscopy
Silicon
Online Access:Request full text
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Summary:We have constructed an integrated SPM and an xy-position interferometer to properly control the dimensions of the lithography patterns. The tracking error of xy-dimensional positioning system is about 2 nm accuracy and the positioning resolution could reach 0.1 nm. The scanning probe microscope (SPM) oxidation and anisotropic tetra-methyl ammonium hydroxide (TMAH) etching were used to produce smooth and uniform nanopatterns on silicon substrates. The combination of SPM oxidation and real time position control is a promising approach to accurately produce prototyping of functional nano-devices.
DOI:10.1109/NANO.2002.1032112