Hourglass and Semi-Hourglass layout techniques to improve radiation hardening of NMOS devices

Radiation hardening devices play a critical role in ensuring the reliability and longevity of electronic systems deployed in harsh radiation environments. Over the years, significant advances have been made to enhance the radiation tolerance of electronic components, resulting in improved performanc...

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Bibliographic Details
Main Authors: Pelcastre Ortega, Carlos Alfredo, Linares Aranda, Monico
Format: Conference Proceeding
Language:English
Subjects:
current degradation index
Degradation
hourglass transistor
Layout
Performance evaluation
positive charge trapped in silicon oxide
Radiation effects
Radiation hardening (electronics)
radiation hardening by design
semi-hourglass transistor
Solid modeling
Three-dimensional displays
total ionizing dose
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Summary:Radiation hardening devices play a critical role in ensuring the reliability and longevity of electronic systems deployed in harsh radiation environments. Over the years, significant advances have been made to enhance the radiation tolerance of electronic components, resulting in improved performance and increased resilience against radiation-induced failures. This paper presents two new layout styles for mosfets the hourglass transistor and the semi-hourglass transistor. The new designs improve the device's behavior under total ionizing radiation (TID). The electrical response of the new devices was characterized by simulations using 3D physical models. The new devices showed 52% and 48% performance in the off-current state after radiation effects.
ISSN:2642-3766
DOI:10.1109/CCE60043.2023.10332915