Characterization of MOCVD-grown InNAs/GaAs quantum wells

Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.

Saved in:
Bibliographic Details
Main Authors: Hongjun Cao, Nuntawong, N., El-Emawy, A.-R.A., Osinski, M.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Aluminum gallium nitride
Electrons
Gallium arsenide
Gallium nitride
Lattices
MOCVD
Nitrogen
Plasma materials processing
Quantum well devices
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.
DOI:10.1109/CLEO.2002.1034440