Characterization of MOCVD-grown InNAs/GaAs quantum wells

Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.

Saved in:
Bibliographic Details
Main Authors: Hongjun Cao, Nuntawong, N., El-Emawy, A.-R.A., Osinski, M.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Aluminum gallium nitride
Electrons
Gallium arsenide
Gallium nitride
Lattices
MOCVD
Nitrogen
Plasma materials processing
Quantum well devices
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 654 vol.1
container_issue
container_start_page 653
container_title
container_volume
creator Hongjun Cao
Nuntawong, N.
El-Emawy, A.-R.A.
Osinski, M.
description Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.
doi_str_mv 10.1109/CLEO.2002.1034440
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1034440</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1034440</ieee_id><sourcerecordid>1034440</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-7344e5eb1558a755155f90c652a307281ea19a7c84faebc05dfe7c27deb58e643</originalsourceid><addsrcrecordid>eNotj0FOwzAQRS0hpELpARAbXyDp2LHjeBmZ0lYKZFN1W03SMQSlCcSpKjg9kejfvN3Xe4w9CoiFALt0xaqMJYCMBSRKKbhh90Jro6WB1MzYIoRPmKZUklp1xzL3gQPWIw3NL45N3_He89fS7Z-j96G_dHzbveVhucY88O8zduP5xC_UtuGB3XpsAy2unLPdy2rnNlFRrrcuL6LGwhiZyYE0VZNChkbrid5CnWqJCRiZCUJh0dSZ8khVDfroydTSHKnSGaUqmbOn_9uGiA5fQ3PC4edwbUv-AFvOQ4I</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Characterization of MOCVD-grown InNAs/GaAs quantum wells</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Hongjun Cao ; Nuntawong, N. ; El-Emawy, A.-R.A. ; Osinski, M.</creator><creatorcontrib>Hongjun Cao ; Nuntawong, N. ; El-Emawy, A.-R.A. ; Osinski, M.</creatorcontrib><description>Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.</description><identifier>ISBN: 1557527067</identifier><identifier>ISBN: 9781557527066</identifier><identifier>DOI: 10.1109/CLEO.2002.1034440</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Aluminum gallium nitride ; Electrons ; Gallium arsenide ; Gallium nitride ; Lattices ; MOCVD ; Nitrogen ; Plasma materials processing ; Quantum well devices</subject><ispartof>Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002, p.653-654 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1034440$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4040,4041,27916,54911</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1034440$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hongjun Cao</creatorcontrib><creatorcontrib>Nuntawong, N.</creatorcontrib><creatorcontrib>El-Emawy, A.-R.A.</creatorcontrib><creatorcontrib>Osinski, M.</creatorcontrib><title>Characterization of MOCVD-grown InNAs/GaAs quantum wells</title><title>Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges</title><addtitle>CLEO</addtitle><description>Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.</description><subject>Absorption</subject><subject>Aluminum gallium nitride</subject><subject>Electrons</subject><subject>Gallium arsenide</subject><subject>Gallium nitride</subject><subject>Lattices</subject><subject>MOCVD</subject><subject>Nitrogen</subject><subject>Plasma materials processing</subject><subject>Quantum well devices</subject><isbn>1557527067</isbn><isbn>9781557527066</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj0FOwzAQRS0hpELpARAbXyDp2LHjeBmZ0lYKZFN1W03SMQSlCcSpKjg9kejfvN3Xe4w9CoiFALt0xaqMJYCMBSRKKbhh90Jro6WB1MzYIoRPmKZUklp1xzL3gQPWIw3NL45N3_He89fS7Z-j96G_dHzbveVhucY88O8zduP5xC_UtuGB3XpsAy2unLPdy2rnNlFRrrcuL6LGwhiZyYE0VZNChkbrid5CnWqJCRiZCUJh0dSZ8khVDfroydTSHKnSGaUqmbOn_9uGiA5fQ3PC4edwbUv-AFvOQ4I</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Hongjun Cao</creator><creator>Nuntawong, N.</creator><creator>El-Emawy, A.-R.A.</creator><creator>Osinski, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2002</creationdate><title>Characterization of MOCVD-grown InNAs/GaAs quantum wells</title><author>Hongjun Cao ; Nuntawong, N. ; El-Emawy, A.-R.A. ; Osinski, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-7344e5eb1558a755155f90c652a307281ea19a7c84faebc05dfe7c27deb58e643</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Absorption</topic><topic>Aluminum gallium nitride</topic><topic>Electrons</topic><topic>Gallium arsenide</topic><topic>Gallium nitride</topic><topic>Lattices</topic><topic>MOCVD</topic><topic>Nitrogen</topic><topic>Plasma materials processing</topic><topic>Quantum well devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Hongjun Cao</creatorcontrib><creatorcontrib>Nuntawong, N.</creatorcontrib><creatorcontrib>El-Emawy, A.-R.A.</creatorcontrib><creatorcontrib>Osinski, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hongjun Cao</au><au>Nuntawong, N.</au><au>El-Emawy, A.-R.A.</au><au>Osinski, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characterization of MOCVD-grown InNAs/GaAs quantum wells</atitle><btitle>Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges</btitle><stitle>CLEO</stitle><date>2002</date><risdate>2002</risdate><spage>653</spage><epage>654 vol.1</epage><pages>653-654 vol.1</pages><isbn>1557527067</isbn><isbn>9781557527066</isbn><abstract>Summary form only given. In this paper, we report the successful MOCVD growth of InNAs QWs using dimethylhydrazine (DMHy) as the nitrogen source. Crystalline quality, composition, and thicknesses of the grown layers were investigated by high- resolution X-ray diffraction.</abstract><pub>IEEE</pub><doi>10.1109/CLEO.2002.1034440</doi></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 1557527067
ispartof Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002, p.653-654 vol.1
issn
language eng
recordid cdi_ieee_primary_1034440
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Absorption
Aluminum gallium nitride
Electrons
Gallium arsenide
Gallium nitride
Lattices
MOCVD
Nitrogen
Plasma materials processing
Quantum well devices
title Characterization of MOCVD-grown InNAs/GaAs quantum wells
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T23%3A47%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Characterization%20of%20MOCVD-grown%20InNAs/GaAs%20quantum%20wells&rft.btitle=Summaries%20of%20Papers%20Presented%20at%20the%20Lasers%20and%20Electro-Optics.%20CLEO%20'02.%20Technical%20Diges&rft.au=Hongjun%20Cao&rft.date=2002&rft.spage=653&rft.epage=654%20vol.1&rft.pages=653-654%20vol.1&rft.isbn=1557527067&rft.isbn_list=9781557527066&rft_id=info:doi/10.1109/CLEO.2002.1034440&rft_dat=%3Cieee_6IE%3E1034440%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-7344e5eb1558a755155f90c652a307281ea19a7c84faebc05dfe7c27deb58e643%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1034440&rfr_iscdi=true