Formation of quasi-regular quantum dots with post-growth thermal annealing and their optical characteristics in InGaN/GaN quantum wells

Summary form only given. In this paper, we report the formation of quasiregular QDs from randomly distributed indium aggregated clusters after post-growth thermal annealing (PGTA) of an InGaN/GaN QW sample. The optical measurements showed quite consistent trends of blue shift and spectral width vari...

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Bibliographic Details
Main Authors: Yen-Sheng Lin, Kung-Jeng Ma, Cheng Hsu, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung-Chen Cheng, Yang, C.C., Hui-Wen Chuang, Cheng-Ta Kuo, Jian-Shihn Tsang, Weirich, T.E.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Electrons
Fluctuations
Gallium nitride
Indium
Quantum dots
Quantum mechanics
Temperature
Thermal engineering
US Department of Transportation
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Summary:Summary form only given. In this paper, we report the formation of quasiregular QDs from randomly distributed indium aggregated clusters after post-growth thermal annealing (PGTA) of an InGaN/GaN QW sample. The optical measurements showed quite consistent trends of blue shift and spectral width variation.
DOI:10.1109/CLEO.2002.1034444