Studying C-V Characteristics of MIS Structures with PE-ALD Al2O3 on HgCdTe Oxidized in Remote RF-Plasma

Metal-insulator-semiconductor (MIS) structures have been made on narrowband n- and p-Hg 1−x Cd x Te(x ≈ 0.22) preliminary chemically cleaned and then oxidized in remote oxygen plasma. Plasma was supplied by an RF generator within a commercial system for plasma-enhanced atomic layer deposition (PE-AL...

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Main Authors: Zakirov, Evgeny R., Kesler, Valeriy G., Sidorov, Georgiy Yu
Format: Conference Proceeding
Language:English
Subjects:
Al 2 O 3
atomic layer deposition
capacitance-voltage
Conductivity
HgCdTe
II-VI semiconductor materials
Insulators
LWIR
MIS
native oxide
Oxidation
Photodiodes
Plasmas
remote plasma
surface passivation
Surface resistance
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Kesler, Valeriy G.
Sidorov, Georgiy Yu
description Metal-insulator-semiconductor (MIS) structures have been made on narrowband n- and p-Hg 1−x Cd x Te(x ≈ 0.22) preliminary chemically cleaned and then oxidized in remote oxygen plasma. Plasma was supplied by an RF generator within a commercial system for plasma-enhanced atomic layer deposition (PE-ALD). An Al 2 O 3 insulating film was deposited on prepared HgCdTe in this system without exposing samples to the ambient atmosphere. HgCdTe epitaxial films comprising or not a surface graded-gap layer (SGGL) have been examined, to reveal its contribution to the electrical properties of the structures. Obtained MIS C-V characteristics reveal near-ideal low-frequency behavior with weak stretching and a narrow hysteresis loop due to low densities of fast and slow surface states. The effective insulator fixed charge has a negative sign with a density of ~1∙10 12 cm −2 . There is no "p-to-n" conductivity type conversion in the structures on HgCdTe grown without the SGGL. The obtained results can be useful for development of HgCdTe-based devices. The proposed passivation approach is compatible with a technology of HgCdTe focal plane arrays (FPAs) manufacturing.
doi_str_mv 10.1109/APEIE59731.2023.10347577
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subjects Al 2 O 3
atomic layer deposition
capacitance-voltage
Conductivity
HgCdTe
II-VI semiconductor materials
Insulators
LWIR
MIS
native oxide
Oxidation
Photodiodes
Plasmas
remote plasma
surface passivation
Surface resistance
title Studying C-V Characteristics of MIS Structures with PE-ALD Al2O3 on HgCdTe Oxidized in Remote RF-Plasma
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