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Transfer-printing of GeSn membranes for broadband photodetection in the extended short-wave infrared

Photodetectors based on transfer-printed GeSn membranes are demonstrated with a cutoff wavelength of about 3 µm at room-temperature. Using an adhesive layer and a Sn content of 11 at.%, GeSn membranes can be transferred without membrane bowing.

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Main Authors: Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Daoust, P., Daligou, G., Brodeur, J., Kena-Cohen, S., Peter, Y.-A., Moutanabbir, O.
Format: Conference Proceeding
Language:English
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creator Lemieux-Leduc, C.
Atalla, M. R. M.
Assali, S.
Daoust, P.
Daligou, G.
Brodeur, J.
Kena-Cohen, S.
Peter, Y.-A.
Moutanabbir, O.
description Photodetectors based on transfer-printed GeSn membranes are demonstrated with a cutoff wavelength of about 3 µm at room-temperature. Using an adhesive layer and a Sn content of 11 at.%, GeSn membranes can be transferred without membrane bowing.
doi_str_mv 10.1109/IPC57732.2023.10360743
format conference_proceeding
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source IEEE Xplore All Conference Series
subjects Bonding
Broadband communication
Fabrication
GeSn
hybrid integration
Lattices
membranes
Photodetectors
Photonics
Strain
transfer printing
title Transfer-printing of GeSn membranes for broadband photodetection in the extended short-wave infrared
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