Clustering Algorithm for the Screening of SiC MOSFETs Connected in Parallel

Parallel connection of SiC MOSFETs is widely used for high-current and high-power applications. Due to manufacturing process immaturity, the parameter dispersion of SiC MOSFETs is severe, the current imbalance for the paralleled SiC MOSFETs is a critical challenge. Firstly, the model of the relation...

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Bibliographic Details
Main Authors: Lv, Fang, Mao, Saijun, Lei, Guangyin, Tan, Qiuyan, Yang, Shuhao, Ding, Yujie
Format: Conference Proceeding
Language:English
Subjects:
classification
Clustering algorithms
current sharing
DBSCAN
Manufacturing processes
MOSFET
parallel-connection
Resistance
Semiconductor device modeling
SiC MOS-FET
Silicon carbide
static characteristics
Statistical analysis
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Summary:Parallel connection of SiC MOSFETs is widely used for high-current and high-power applications. Due to manufacturing process immaturity, the parameter dispersion of SiC MOSFETs is severe, the current imbalance for the paralleled SiC MOSFETs is a critical challenge. Firstly, the model of the relationship between the current disparity of paralleled devices and static characteristics, such as threshold voltage and onstate resistance of SiC MOSFETs is proposed in this paper. Then, the concept of multivariate statistical analysis is introduced to quantify the similarity of static characteristics into distance parameters, and DBSCAN (Density-Based Spatial Clustering of Application with Noise) algorithm is developed for the screening of SiC MOSFETs to mitigate the current imbalance. To compare the proposed method with traditional screening methods, a double pulse test platform with four SiC MOSFETs parallel connection circuit is built. Less than 4% imbalance between the drain-source current for the screened SiC MOSFETs with parallel-connection has been achieved.
ISSN:2329-3748
DOI:10.1109/ECCE53617.2023.10362020