A Behavioral Model for Short-Circuit Operation of a GaN-based Half Bridge

The Short-Circuit (SC) robustness of GaN HEMTs represents a relevant issue for their use in power electronics. Hence, understanding and simulating their SC behavior is critical to develop a proper protection circuit, but, unfortunately, accurate simulations can be only achieved with numerical physic...

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Bibliographic Details
Main Authors: Palazzo, Simone, Pereira, Thiago, Pascal, Yoann, Busatto, Giovanni, Liserre, Marco
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Behavioral sciences
Bridge circuits
GaN HEMTs
Half bridge
HEMTs
Logic gates
Mathematical models
Power electronics
Short-Circuit
SPICE model
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Summary:The Short-Circuit (SC) robustness of GaN HEMTs represents a relevant issue for their use in power electronics. Hence, understanding and simulating their SC behavior is critical to develop a proper protection circuit, but, unfortunately, accurate simulations can be only achieved with numerical physics-based simulators, that includes all the physical phenomena involved in the real device, while they become less suitable for power electronics simulations. A behavioral model is proposed to accurately simulate in SPICE the SC behavior of GaN HEMTs and its impact in Half Bridges. The proposed model is derived by fitting the experimental results of gate and drain I-V characterization using equations introduced here for the first time. Experimental results conducted on the GaN-based Half Bridge are used to validate the model, that shows an improved capability in reproducing the main phenomena involved during the SC.
ISSN:2329-3748
DOI:10.1109/ECCE53617.2023.10362158