Investigation of the limit conditions of SiC MOSFET body diode reverse recovery

This work investigates the occurrences of Parasitic Turn-On and Snappy Recovery during the reverse recovery process in Silicon Carbide MOSFETs under various operating conditions. Both phenomena can significantly alter the reverse recovery response, leading to it being too "soft" or "s...

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Bibliographic Details
Main Authors: Di Luca Cardillo, Giuseppe, Salvo, Luciano, Pulvirenti, Mario, Sciacca, Angelo Giuseppe, Cascino, Salvatore, Rizzo, Santi Agatino, Scelba, Giacomo, Salemo, Nunzio
Format: Conference Proceeding
Language:English
Subjects:
cross-talk
diode reverse recovery parameters
Energy conversion
MOSFET
Parasitic Turn-On
SiC MOSFET
Silicon carbide
Snappy Recovery
Stress
Switches
switching transient
Topology
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Summary:This work investigates the occurrences of Parasitic Turn-On and Snappy Recovery during the reverse recovery process in Silicon Carbide MOSFETs under various operating conditions. Both phenomena can significantly alter the reverse recovery response, leading to it being too "soft" or "snappy", resulting in increased electrical losses and stresses on power devices during regular operations. This document presents a description and experimental investigation of these phenomena on a half-bridge topology for different switching settings, highlighting their influence on the reverse recovery parameters.
ISSN:2329-3748
DOI:10.1109/ECCE53617.2023.10362298