Switch Cell Design for Novel High-frequency Press-pack SiC FET Modules

This paper presents a novel high-frequency press-pack (HFPP) SiC FET module for broad medium-voltage (MV) high-power areas, such as grid distribution and protection and high-speed drives. By incorporating a significant number of low-specific-resistance SiC FET dies in a single package, the SiC FET m...

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Bibliographic Details
Main Authors: Muravleva, Ekaterina, Canbaz, Bogac, Wang, Jun, Qu, Liyan, Hudgins, Jerry
Format: Conference Proceeding
Language:English
Subjects:
double-sided sintering
Field effect transistors
high-frequency press-pack module
Inductance
monolithic spring
Multilevel converters
short-circuit failure mode
SiC FET package
Silicon carbide
Sintering
Stacking
Switches
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Summary:This paper presents a novel high-frequency press-pack (HFPP) SiC FET module for broad medium-voltage (MV) high-power areas, such as grid distribution and protection and high-speed drives. By incorporating a significant number of low-specific-resistance SiC FET dies in a single package, the SiC FET modules are expected to achieve at least 5× lower conduction losses and 10× faster switching frequency compared to Si press-pack (PP) IGBTs and maintain a short-circuit failure mode (SCFM). As an essential part of the HFPP SiC module development, this work proposes a novel package-level switch-cell building block (SCBB) concept and rotated stacking structure for low power-loop inductance in a variety of multilevel topologies, along with the switch cell's design and packaging details. The latter includes double-sided sintering of SiC dies and a proposed four-leg monolithic spring for pressure generation. Simulations, fabrication, and partial experimental validation are exhibited.
ISSN:2329-3748
DOI:10.1109/ECCE53617.2023.10362443