Characterization of resistive switching phenomena in thermal silicon oxide RRAM devices by means of small-signal measurements

Metal-oxide-semiconductor devices with thermal silicon oxide are investigated with respect to their potential application as RRAM devices. We use small-signal measurements to characterize the device properties. Material and electrical characterization results are presented and discussed for devices...

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Bibliographic Details
Main Authors: Wisniewski, Piotr, Stonio, Bartlomiej, Jasinski, Jakub, Mazurak, Andrzej
Format: Conference Proceeding
Language:English
Subjects:
Electric potential
Electron devices
memristor
Memristors
MIS device
RRAM
SCLC
Silicon
silicon oxide
small-signal measurements
Substrates
Switches
Thermal resistance
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Description
Summary:Metal-oxide-semiconductor devices with thermal silicon oxide are investigated with respect to their potential application as RRAM devices. We use small-signal measurements to characterize the device properties. Material and electrical characterization results are presented and discussed for devices fabricated on highly doped n-type substrate.
ISSN:2836-9947
DOI:10.1109/IMFEDK60983.2023.10366347