Novel concept for THz-photomixer based on periodically doped heterostructures and quasi ballistic transport

Reports on a new concept for THz photomixers, which are not (as usually) frequency limited by the carrier lifetime in low-temperature-grown GaAs. The concept is based on ballistic electron transport in a periodically doped heterostructure (p-i-n-p-i-n-superlattice) and allows for impedance matching...

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Bibliographic Details
Main Authors: Eckardt, M., Schwanhausser, A., Renner, F., Robledo, L., Friedrich, A., Pohl, P., Kiesel, P., Malzer, S., Dohler, G.H., Driscoll, D., Hanson, M., Gossard, A.C.
Format: Conference Proceeding
Language:English
Subjects:
Ballistic transport
Charge carrier lifetime
Charge carrier processes
Electron mobility
Frequency
Gallium arsenide
Impedance matching
Power lasers
Space charge
Spontaneous emission
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Summary:Reports on a new concept for THz photomixers, which are not (as usually) frequency limited by the carrier lifetime in low-temperature-grown GaAs. The concept is based on ballistic electron transport in a periodically doped heterostructure (p-i-n-p-i-n-superlattice) and allows for impedance matching to the attached antenna.
DOI:10.1109/THZ.2002.1037615