Study on Estimation Method of Stray Inductance and Its Influence on Switching Loss for SiC MOSFET

Silicon carbide (SiC) MOSFETs offer notable benefits such as fast switching time and low switching losses. However, the quick switching characteristics of SiC MOSFETs can generate high rates of dv/dt and di/dt, with the presence of stray inductance, giving rise to voltage and current oscillations. T...

Full description

Saved in:
Bibliographic Details
Main Authors: Zhuang, Xiao-Yi, Shen, Jian-Xin, Xu, Yong, Wang, Yun-Chong
Format: Conference Proceeding
Language:English
Subjects:
current oscillation
dv/dt
Silicon carbide MOSFETs
switching loss
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Silicon carbide (SiC) MOSFETs offer notable benefits such as fast switching time and low switching losses. However, the quick switching characteristics of SiC MOSFETs can generate high rates of dv/dt and di/dt, with the presence of stray inductance, giving rise to voltage and current oscillations. To address this issue, a novel method has been proposed to accurately estimate the stray inductance originating from wires or component leads. This method enables the determination of the ratio of each stray inductance to the loop inductance. Consequently, the switching characteristics are analyzed under different stray inductance from different lead lengths. The validity of these findings has been confirmed by experimental results.
ISSN:2771-7577
DOI:10.1109/SCEMS60579.2023.10379277