A Fully Integrated, Automatically Generated DC-DC Converter Maintaining >75% Efficiency From 398 K Down to 23 K Across Wide Load Ranges in 12 nm FinFET

This paper presents a fully integrated recursive successive-approximation switched capacitor (RSC) DC-DC converter implemented using an automatic cell-based layout generation in 12 nm FinFET technology. A novel design methodology is demonstrated based on the theoretical analyses of the optimal energ...

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Bibliographic Details
Published in:IEEE solid-state circuits letters 2024-01, Vol.7, p.1-1
Main Authors: Li, Anhang, Lee, Jeongsup, Mukim, Prashansa, Hoskins, Brian D., Shrestha, Pragya, Wentzloff, David, Blaauw, David, Sylvester, Dennis, Saligane, Mehdi
Format: Article
Language:English
Subjects:
Capacitors
Cryogenic
Cryogenics
DC-DC
FinFETs
Resistance
Switched-Capacitor
Switches
Voltage
Voltage measurement
Wide-Temperature
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Summary:This paper presents a fully integrated recursive successive-approximation switched capacitor (RSC) DC-DC converter implemented using an automatic cell-based layout generation in 12 nm FinFET technology. A novel design methodology is demonstrated based on the theoretical analyses of the optimal energy operation of the switched-capacitor (SC) DC-DC converter and directly finds the optimal design parameters from the given input specifications. The converter maintains >75% efficiency across a vast range of output currents and temperatures. Our design targets voltage scaling for applications such as cryo-computing, cryo-sensing, and parts of quantum computing to achieve high system power efficiency.
ISSN:2573-9603
2573-9603
DOI:10.1109/LSSC.2023.3349129