Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In2O3 Dual-Gate Transistor

We investigate both hot carrier induced degradation (HCD) and positive bias stress instability (PBTI) in back-end-of-the-line (BEOL) compatible tungsten-doped In 2 O 3 (IWO) dual-gate field effect transistor (DG-FET) with scaled- EOT(1.18nm) gate stack. The DG-FET shows simultaneous improvement in t...

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Bibliographic Details
Main Authors: Aabrar, Khandker Akif, Gopal Kirtania, Sharadindu, Deng, Sunbin, Choe, Gihun, Khan, Asif, Yu, Shimeng, Datta, Suman
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Field effect transistors
Logic gates
Mathematical models
Pulse measurements
Stress
Temperature dependence
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Summary:We investigate both hot carrier induced degradation (HCD) and positive bias stress instability (PBTI) in back-end-of-the-line (BEOL) compatible tungsten-doped In 2 O 3 (IWO) dual-gate field effect transistor (DG-FET) with scaled- EOT(1.18nm) gate stack. The DG-FET shows simultaneous improvement in threshold voltage (V T ) stability and enhancement in device performance. The DG-FET exhibits 11mV V T -shift under 4.24 MV/cm oxide field (Eox=Voverdrive/EOT) stress for 1Ks, while exhibiting drive current gain of 3x over the back-gate (BG) FET. This makes the IWO DG-FET a viable BEOL transistor candidate for enabling next generation monolithic 3D (M3D) ICs.
ISSN:2156-017X
DOI:10.1109/IEDM45741.2023.10413776