Highly Responsive Broadband (250~1000 nm) DUV-NIR Photodetector and Tunable Emitter Enabled by III-V Nanowire on Silicon for Integrated Photonics

Low-dimensional semiconductor nanostructures offer intriguing optoelectronic properties and new functionalities as fundamental elements for the advancement of integrated photonic technologies. In this work, we realized a bias-controlled, superior dual-functional broadband light detecting and emittin...

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Bibliographic Details
Main Authors: Yu, Huabin, Wang, Rui, Xiao, Shudan, Fu, Lan, Sun, Haiding
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Bars
Optical filters
Photonics
Silicon
Visualization
Wide band gap semiconductors
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Summary:Low-dimensional semiconductor nanostructures offer intriguing optoelectronic properties and new functionalities as fundamental elements for the advancement of integrated photonic technologies. In this work, we realized a bias-controlled, superior dual-functional broadband light detecting and emitting diode enabled by constructing the GaN nanowire-on-Si platform. Strikingly, the diode under reverse bias has a high responsivity over 200 mA/W for a wide operation band, ranging from deep ultraviolet (DUV: 254 nm) to near-infrared (NIR: 1000 nm) region. Furthermore, the device under zero bias still possesses superior DUV light selectivity with a high off-rejection ratio of over 167. While in the operation of light-emitting mode, it can achieve large spectral changes from UV to red via coating of colloid quantum dots on the nanowires. The device was further incorporated into various optoelectronic systems demonstrating their functionality of multicolor imaging, filterless color discrimination, and DUV/NIR visualization.
ISSN:2156-017X
DOI:10.1109/IEDM45741.2023.10413822