Loading…

An integrated SiGe transmitter circuit for 24 GHz radar sensors

The design of an integrated transmitter circuit is described, which operates in the 24 GHz band. The circuit is comprised of a VCO, which delivers 18 mW power at 50 ohm, a frequency divider chain and an additional RF output to drive the LO-input of a receiver chip in a 24 GHz FM-CW radar system. SiG...

Full description

Saved in:
Bibliographic Details
Main Authors: Wennekers, P., Ghazionour, A., Reuter, R.
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 215
container_issue
container_start_page 212
container_title
container_volume
creator Wennekers, P.
Ghazionour, A.
Reuter, R.
description The design of an integrated transmitter circuit is described, which operates in the 24 GHz band. The circuit is comprised of a VCO, which delivers 18 mW power at 50 ohm, a frequency divider chain and an additional RF output to drive the LO-input of a receiver chip in a 24 GHz FM-CW radar system. SiGe-HBTs with typical F/sub t/=48 GHz/F/sub max/=80 GHz and V/sub CEO/ >3.2 V of a production SiGe-BiCMOS process are used as active devices. All resonators and matching circuits are implemented on chip by using the 4-layer dielectric/metal (AlCu) stack of the process.
doi_str_mv 10.1109/BIPOL.2002.1042920
format conference_proceeding
fullrecord <record><control><sourceid>pascalfrancis_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_1042920</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1042920</ieee_id><sourcerecordid>15760047</sourcerecordid><originalsourceid>FETCH-LOGICAL-i203t-dc087b88df62ca05c9194ff3ef4351e945ee1c141d36585308e47260e99f3f433</originalsourceid><addsrcrecordid>eNpFkEtLAzEUhYMPsNb-Ad1k43LqzWuSrKQWnRYKFVRwV2LmRiLttCRxYX-9AyMIB87ifOdyOYRcM5gyBvbuYfm8Xk05AJ8ykNxyOCEjLrSplIX3UzKx2kAvoVXN2BkZMTCmstzaC3KZ81dfBK7NiNzPOhq7gp_JFWzpS2yQluS6vIulYKI-Jv8dCw37RLmkzeJIk2tdohm7vE_5ipwHt804-fMxeXt6fJ0vqtW6Wc5nqypyEKVqPRj9YUwbau4dKG-ZlSEIDFIohlYqROaZZK2olVECDErNa0Brg-gZMSa3w92Dy95tQ_-ij3lzSHHn0s-GKV0DSN1zNwMXEfE_HjYSvyy3VsQ</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>An integrated SiGe transmitter circuit for 24 GHz radar sensors</title><source>IEEE Xplore All Conference Series</source><creator>Wennekers, P. ; Ghazionour, A. ; Reuter, R.</creator><creatorcontrib>Wennekers, P. ; Ghazionour, A. ; Reuter, R.</creatorcontrib><description>The design of an integrated transmitter circuit is described, which operates in the 24 GHz band. The circuit is comprised of a VCO, which delivers 18 mW power at 50 ohm, a frequency divider chain and an additional RF output to drive the LO-input of a receiver chip in a 24 GHz FM-CW radar system. SiGe-HBTs with typical F/sub t/=48 GHz/F/sub max/=80 GHz and V/sub CEO/ &gt;3.2 V of a production SiGe-BiCMOS process are used as active devices. All resonators and matching circuits are implemented on chip by using the 4-layer dielectric/metal (AlCu) stack of the process.</description><identifier>ISSN: 1088-9299</identifier><identifier>ISBN: 9780780375611</identifier><identifier>ISBN: 0780375610</identifier><identifier>EISSN: 2378-590X</identifier><identifier>DOI: 10.1109/BIPOL.2002.1042920</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Circuit properties ; Circuits ; Dielectrics ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Frequency conversion ; Germanium silicon alloys ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Oscillators, resonators, synthetizers ; Production ; Radar ; Radio frequency ; Silicon germanium ; Transmitters ; Voltage-controlled oscillators</subject><ispartof>Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2002, p.212-215</ispartof><rights>2004 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1042920$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1042920$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=15760047$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wennekers, P.</creatorcontrib><creatorcontrib>Ghazionour, A.</creatorcontrib><creatorcontrib>Reuter, R.</creatorcontrib><title>An integrated SiGe transmitter circuit for 24 GHz radar sensors</title><title>Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting</title><addtitle>BIPOL</addtitle><description>The design of an integrated transmitter circuit is described, which operates in the 24 GHz band. The circuit is comprised of a VCO, which delivers 18 mW power at 50 ohm, a frequency divider chain and an additional RF output to drive the LO-input of a receiver chip in a 24 GHz FM-CW radar system. SiGe-HBTs with typical F/sub t/=48 GHz/F/sub max/=80 GHz and V/sub CEO/ &gt;3.2 V of a production SiGe-BiCMOS process are used as active devices. All resonators and matching circuits are implemented on chip by using the 4-layer dielectric/metal (AlCu) stack of the process.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Dielectrics</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency conversion</subject><subject>Germanium silicon alloys</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Production</subject><subject>Radar</subject><subject>Radio frequency</subject><subject>Silicon germanium</subject><subject>Transmitters</subject><subject>Voltage-controlled oscillators</subject><issn>1088-9299</issn><issn>2378-590X</issn><isbn>9780780375611</isbn><isbn>0780375610</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFkEtLAzEUhYMPsNb-Ad1k43LqzWuSrKQWnRYKFVRwV2LmRiLttCRxYX-9AyMIB87ifOdyOYRcM5gyBvbuYfm8Xk05AJ8ykNxyOCEjLrSplIX3UzKx2kAvoVXN2BkZMTCmstzaC3KZ81dfBK7NiNzPOhq7gp_JFWzpS2yQluS6vIulYKI-Jv8dCw37RLmkzeJIk2tdohm7vE_5ipwHt804-fMxeXt6fJ0vqtW6Wc5nqypyEKVqPRj9YUwbau4dKG-ZlSEIDFIohlYqROaZZK2olVECDErNa0Brg-gZMSa3w92Dy95tQ_-ij3lzSHHn0s-GKV0DSN1zNwMXEfE_HjYSvyy3VsQ</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Wennekers, P.</creator><creator>Ghazionour, A.</creator><creator>Reuter, R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>An integrated SiGe transmitter circuit for 24 GHz radar sensors</title><author>Wennekers, P. ; Ghazionour, A. ; Reuter, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-dc087b88df62ca05c9194ff3ef4351e945ee1c141d36585308e47260e99f3f433</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>Dielectrics</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency conversion</topic><topic>Germanium silicon alloys</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Oscillators, resonators, synthetizers</topic><topic>Production</topic><topic>Radar</topic><topic>Radio frequency</topic><topic>Silicon germanium</topic><topic>Transmitters</topic><topic>Voltage-controlled oscillators</topic><toplevel>online_resources</toplevel><creatorcontrib>Wennekers, P.</creatorcontrib><creatorcontrib>Ghazionour, A.</creatorcontrib><creatorcontrib>Reuter, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wennekers, P.</au><au>Ghazionour, A.</au><au>Reuter, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An integrated SiGe transmitter circuit for 24 GHz radar sensors</atitle><btitle>Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting</btitle><stitle>BIPOL</stitle><date>2002</date><risdate>2002</risdate><spage>212</spage><epage>215</epage><pages>212-215</pages><issn>1088-9299</issn><eissn>2378-590X</eissn><isbn>9780780375611</isbn><isbn>0780375610</isbn><abstract>The design of an integrated transmitter circuit is described, which operates in the 24 GHz band. The circuit is comprised of a VCO, which delivers 18 mW power at 50 ohm, a frequency divider chain and an additional RF output to drive the LO-input of a receiver chip in a 24 GHz FM-CW radar system. SiGe-HBTs with typical F/sub t/=48 GHz/F/sub max/=80 GHz and V/sub CEO/ &gt;3.2 V of a production SiGe-BiCMOS process are used as active devices. All resonators and matching circuits are implemented on chip by using the 4-layer dielectric/metal (AlCu) stack of the process.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/BIPOL.2002.1042920</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1088-9299
ispartof Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2002, p.212-215
issn 1088-9299
2378-590X
language eng
recordid cdi_ieee_primary_1042920
source IEEE Xplore All Conference Series
subjects Applied sciences
Circuit properties
Circuits
Dielectrics
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Frequency conversion
Germanium silicon alloys
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Oscillators, resonators, synthetizers
Production
Radar
Radio frequency
Silicon germanium
Transmitters
Voltage-controlled oscillators
title An integrated SiGe transmitter circuit for 24 GHz radar sensors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T15%3A21%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=An%20integrated%20SiGe%20transmitter%20circuit%20for%2024%20GHz%20radar%20sensors&rft.btitle=Proceedings%20of%20the%20Bipolar/BiCMOS%20Circuits%20and%20Technology%20Meeting&rft.au=Wennekers,%20P.&rft.date=2002&rft.spage=212&rft.epage=215&rft.pages=212-215&rft.issn=1088-9299&rft.eissn=2378-590X&rft.isbn=9780780375611&rft.isbn_list=0780375610&rft_id=info:doi/10.1109/BIPOL.2002.1042920&rft_dat=%3Cpascalfrancis_CHZPO%3E15760047%3C/pascalfrancis_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i203t-dc087b88df62ca05c9194ff3ef4351e945ee1c141d36585308e47260e99f3f433%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1042920&rfr_iscdi=true