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S-RuM Technology for Extreme Miniaturization and Integration of Passive Electronics and Microfluidics

Strain-induced Self-rolled-up membrane (S-RuM) technology is a paradigm-shifting fabrication scheme for extreme miniaturization and integration of passive electronic, photonic and microfluidic components. The overarching physical principle of S-RuM is strain-driven spontaneous deformation of 2D memb...

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Bibliographic Details
Main Authors: Yang, Zhendong, Khandelwal, Apratim, Froeter, Paul, Nguyen, Kristen, Wang, Allen T., Wicker, Scott A., Li, Xiuling
Format: Conference Proceeding
Language:English
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Summary:Strain-induced Self-rolled-up membrane (S-RuM) technology is a paradigm-shifting fabrication scheme for extreme miniaturization and integration of passive electronic, photonic and microfluidic components. The overarching physical principle of S-RuM is strain-driven spontaneous deformation of 2D membranes into 3D architectures. In this talk, I will present several examples of S-RuM based applications including inductors, transformers, L-C filters, and waveguides, as well as microfluidic channels for neuron cell growth acceleration and DNA-based data storage.
ISSN:2160-1968
DOI:10.1109/MEMS58180.2024.10439466