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S-RuM Technology for Extreme Miniaturization and Integration of Passive Electronics and Microfluidics
Strain-induced Self-rolled-up membrane (S-RuM) technology is a paradigm-shifting fabrication scheme for extreme miniaturization and integration of passive electronic, photonic and microfluidic components. The overarching physical principle of S-RuM is strain-driven spontaneous deformation of 2D memb...
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Main Authors: | , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | Strain-induced Self-rolled-up membrane (S-RuM) technology is a paradigm-shifting fabrication scheme for extreme miniaturization and integration of passive electronic, photonic and microfluidic components. The overarching physical principle of S-RuM is strain-driven spontaneous deformation of 2D membranes into 3D architectures. In this talk, I will present several examples of S-RuM based applications including inductors, transformers, L-C filters, and waveguides, as well as microfluidic channels for neuron cell growth acceleration and DNA-based data storage. |
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ISSN: | 2160-1968 |
DOI: | 10.1109/MEMS58180.2024.10439466 |