Quantifying NBTI Recovery and Its Impact on Lifetime Estimations in Advanced Semiconductor Technologies

Understanding the impact of recovery on Negative Bias Temperature Instability (NBTI) measurements has remained a persistent challenge in accurately estimating the reliability life-time of semiconductor devices. Despite significant efforts to mitigate this influence, achieving its complete eliminatio...

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Bibliographic Details
Main Authors: Singh, Karan, Kalra, Shruti, Beniwal, Ruby
Format: Conference Proceeding
Language:English
Subjects:
Device Lifetime
NBTI
Negative bias temperature instability
Recovery
Reliability
Semiconductor device measurement
Semiconductor devices
Temperature measurement
Testing
Thermal variables control
Online Access:Request full text
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Summary:Understanding the impact of recovery on Negative Bias Temperature Instability (NBTI) measurements has remained a persistent challenge in accurately estimating the reliability life-time of semiconductor devices. Despite significant efforts to mitigate this influence, achieving its complete elimination has proven elusive. This paper aims to quantify the extent of recovery's effect on NBTI measurements and subsequently investigates how the choice of measurement system and testing duration influence NBTI lifetime estimation in advanced technologies such as 22nm Bulk CMOS and 22nm Metal Gate High-k (MGK) Technologies. These insights are pivotal for enhancing our comprehension of NBTI behavior and improving the reliability assessment of cutting-edge semiconductor technologies.
ISSN:2643-444X
DOI:10.1109/ICSC60394.2023.10440992