Transient Voltage Suppressor Diode Array Protection Circuits with Reducing Loading Effect under High-Power Microwave Pulse Injection

This article aims to design transient voltage suppressor (TVS) diode array protection circuits under high-power microwave (HPM) pulse injection to protect sensitive semiconductor and microwave devices from interfered or even damaged by intentionally electromagnetic interference. First of all, conduc...

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Bibliographic Details
Published in:IEEE transactions on electromagnetic compatibility 2024-04, Vol.66 (2), p.1-11
Main Authors: Zhang, Yue, Zhou, Liang, Mao, Jun-Fa
Format: Article
Language:English
Subjects:
Arrays
Circuit design
Circuit protection
Conductivity modulation (CM)
Current measurement
Design parameters
Diodes
Electric potential
Electromagnetic interference
High power microwaves
high-power microwave (HPM)
Inductance
Integrated circuit modeling
intentionally electromagnetic interference (IEMI)
multiple discharge paths
overshoot protection ratio (PR)
Resistance
Transient analysis
transient voltage suppressor (TVS) diode array
Transmission line measurements
transmission line pulse (TLP) measurement
Transmission lines
Voltage
Voltage measurement
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Summary:This article aims to design transient voltage suppressor (TVS) diode array protection circuits under high-power microwave (HPM) pulse injection to protect sensitive semiconductor and microwave devices from interfered or even damaged by intentionally electromagnetic interference. First of all, conductivity modulation with charge dependent resistors is added into original nonlinear large signal TVS diode model provided by Infineon and simulated results by improved model are compared with measured results obtained by transmission line pulse measurement. Next, due to the fact that the capacitance of the TVS diode degrades RF performances of the protected device, a transmission line (TL) connecting with the TVS diode is designed to improve the S-parameters. Subsequently, design procedures of circuits with multiple discharge paths of TVS diodes are summarized. Based on above these two points, four protection circuits are proposed and tested under HPM measurement system. The highest overshoot protection ratio of these circuits is approximately 16.5-22 dB when the input HPM pulse power ranges from 50 to 63 dBm. Through simulated and measured results, couple microstrip TLs and effect of TL inductance on overshoot PRs are investigated.
ISSN:0018-9375
1558-187X
DOI:10.1109/TEMC.2024.3365471