Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress

This work compares Silicon Carbide (SiC) MOSFET electrical degradation, with special focus on the threshold voltage, under Gate Switching Stress (GSS) and Application Switching Stress (ASS) tests. For this purpose, a dedicated setup has been developed and utilized to dynamically stress devices under...

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Bibliographic Details
Main Authors: Gomez, Alexis A., Garcia-Mere, Juan R., Rodriguez, Alberto, Rodriguez, Juan, Jimenez, Carlos, Roig-Guitart, Jaume
Format: Conference Proceeding
Language:English
Subjects:
AC Bias Temperature Instability (AC BTI)
Application switching stress
Degradation
Dynamic Gate Stress
Dynamic Reverse Bias
Gate switching stress
Logic gates
MOSFET
Reliability
Silicon carbide
Silicon Carbide (SiC)
Switches
Threshold voltage
Topology
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Description
Summary:This work compares Silicon Carbide (SiC) MOSFET electrical degradation, with special focus on the threshold voltage, under Gate Switching Stress (GSS) and Application Switching Stress (ASS) tests. For this purpose, a dedicated setup has been developed and utilized to dynamically stress devices under different conditions. Remarkably, the degradation differs between GSS and ASS, thus being more pronounced in the latter case. An explanation based on TCAD simulation analysis is provided along with a methodology to adapt GSS testing to obtain hard-switching real application results.
ISSN:2470-6647
DOI:10.1109/APEC48139.2024.10509140