Energy-based Method to Estimate the Partial Hard Turn-on Loss of Complementary SiC MOSFET from Experiment

• Main Authors: Mandal, Manish, M, Bharath Kumar, G, Malingu, Roy, Shamibrota K, Basu, Kaushik
• Format: Conference Proceeding
• Language: English
• Subjects: Current measurement; energy-based method; Estimation; experiment; loss; measurement; MOSFET; partial hard turn-on; Semiconductor device modeling; SiC MOSFET; Silicon carbide; soft-switching; Voltage measurement; Zero voltage switching; zero-voltage switching (ZVS)
• ISSN: 2470-6647
• DOI: 10.1109/APEC48139.2024.10509333

In a capacitor-assisted soft-switching converter, the zero-voltage turn-on (lossless) of the complementary MOSFET is lost at low values of load current, and it incurs a significant amount of turn-on loss. This phenomenon is termed as the partial hard turn-on, and it is a special case of soft-switching dynamics. Estimation of partial hard turn-on loss is essential for predicting light load efficiency of any soft-switched converter. However, direct experimental measurement is not accurate due to the presence of circuit parasitics. Also, it is difficult to measure waveforms of high-side devices due to high-frequency common mode voltage. This paper proposes an alternate energy-based method to estimate the partial hard turn-on loss of the complementary MOSFET using experimental data. This method is derived from the behavioral model through approximations. Although indirect, this method results in a simple and accurate estimation of partial hard turn-on loss from measured waveforms. The proposed energy-based technique is verified through behavioral simulation and experiment for a 39A, 1200V SiC MOSFET for a wide range of operating conditions.