GaAs enhancement mode FET-tunnel diode ultra-fast low power inverter and memory cell

A microtunnel diode load for a normally off enhancement mode gallium arsenide field effect transistor provides a compact inverter circuit of fast switching speed and low power consumption. Level shifting is not required, and direct coupling with multiple fan-out causes a comparatively small decrease...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1979-10, Vol.14 (5), p.797-800
Main Author: Lehovec, K.
Format: Article
Language:English
Subjects:
Capacitance
Diodes
FETs
Gallium arsenide
Inverters
Logic
Rectifiers
Resistors
Switching circuits
Threshold voltage
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Summary:A microtunnel diode load for a normally off enhancement mode gallium arsenide field effect transistor provides a compact inverter circuit of fast switching speed and low power consumption. Level shifting is not required, and direct coupling with multiple fan-out causes a comparatively small decrease in speed. The tunnel diode FET logic (TDFL) should be capable of operation at 2 GHz with a power-delay time product of 3.4 fJ for an output node capacitance of 50 fF. The negative characteristic of the tunnel diode combined with the FET provides a compact memory cell. However, advances in the state of the art for producing microtunnel diodes of precisely controlled peak current will be required before a viable TDFL can emerge.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1979.1051273