Measurement and modeling of charge feedthrough in n-channel MOS analog switches

Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage decreases linearly with the input voltage....

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1985-12, Vol.20 (6), p.1206-1213
Main Authors: Wilson, W.B., Massoud, H.Z., Swanson, E.J., George, R.T., Fair, R.B.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Charge measurement
CMOS technology
Computer simulation
Current measurement
Electronics
Electrons
Exact sciences and technology
MOS capacitors
MOSFET circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switches
Transistors
Voltage
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Summary:Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage decreases linearly with the input voltage. The significance of this observation when considering harmonic distortion in sample-and-hold circuits is discussed. A first-order computer simulation based on the quasi-static small-signal MOSFET capacitances shows good agreement with experimental results.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1985.1052460