Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence

We evaluate the soft error rate (SER) in 18 nm FDSOI-planar SRAM and investigate the scaling trend of SER in FDSOI-planar. Our findings demonstrate that the SER in 18 nm FDSOI-planar is significantly lower than that of 28 nm FDSOI-planar. The total SER (alpha SER + neutron SER) in SRAM of 18 nm FDSO...

Full description

Saved in:
Bibliographic Details
Main Authors: Uemura, Taiki, Chung, Byungjin, Choi, Jaehee, Lee, Seungbae, Chung, Shinyoung, Hwang, Yuchul, Pae, Sangwoo
Format: Conference Proceeding
Language:English
Subjects:
Error analysis
Neutrons
Random access memory
Reliability
Silicon-on-insulator
Temperature dependence
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We evaluate the soft error rate (SER) in 18 nm FDSOI-planar SRAM and investigate the scaling trend of SER in FDSOI-planar. Our findings demonstrate that the SER in 18 nm FDSOI-planar is significantly lower than that of 28 nm FDSOI-planar. The total SER (alpha SER + neutron SER) in SRAM of 18 nm FDSOI-planar is lower than all the bulk-planar and bulk-FinFET technologies. We also examine the temperature dependence of SER in FDSOI-planar.
ISSN:1938-1891
DOI:10.1109/IRPS48228.2024.10529357