Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress

This paper introduces a novel three-dimensional approach to model threshold voltage variation (\mathbf{\Delta} \boldsymbol{V}_{\boldsymbol{th}}) during time-dependent dielectric breakdown (TDDB) stress of SiC trench MOSFETs in a wide temperature range \boldsymbol{T}=\mathbf{0}\ldots \mathbf{250}{{}^...

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Bibliographic Details
Main Authors: Avramenko, M., De Schepper, L., Cano, J.-F., Geenen, F., Moens, P., Marcuzzi, A., De Santi, C., Meneghini, M.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
constant voltage stress
MOSFET
recovery
Semiconductor device modeling
Silicon carbide
Solid modeling
Temperature distribution
Threshold voltage
threshold voltage instability
time-dependent dielectric breakdown
trench MOSFET
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Summary:This paper introduces a novel three-dimensional approach to model threshold voltage variation (\mathbf{\Delta} \boldsymbol{V}_{\boldsymbol{th}}) during time-dependent dielectric breakdown (TDDB) stress of SiC trench MOSFETs in a wide temperature range \boldsymbol{T}=\mathbf{0}\ldots \mathbf{250}{{}^{\circ}\mathbf{C}} and studies the processes of \mathbf{\Delta} \boldsymbol{V}_{\boldsymbol{th}} recovery at room temperature.
ISSN:1938-1891
DOI:10.1109/IRPS48228.2024.10529358