A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles

A simplified methodology to link CW (Continuous Wave) RF stresses to complex mission profiles is presented in order to compare the lifetimes of different 40nm PDSOI Power Amplifier (PA) cells, versus bias and under different 5G-FR2 modulation profiles. The best lifetime is achieved when using the mo...

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Bibliographic Details
Main Authors: Divay, A., Dehos, C., Charlet, I., Gaillard, F., Duriez, B., Garros, X., Antonijevic, J., Hai, J., Revil, N., Forest, J., Knopik, V., Cacho, F., Roy, D., Federspiel, X., Cremer, S., Chevalier, P.
Format: Conference Proceeding
Language:English
Subjects:
5G mobile communication
5G-FR2 modulation
Aging
mmWave
Modulation
Power amplifiers
Radio frequency
RF reliability
Semiconductor device modeling
Silicon-on-insulator
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Summary:A simplified methodology to link CW (Continuous Wave) RF stresses to complex mission profiles is presented in order to compare the lifetimes of different 40nm PDSOI Power Amplifier (PA) cells, versus bias and under different 5G-FR2 modulation profiles. The best lifetime is achieved when using the most complex 5G modulation due to output power/linearity constraints. VT drift correction is also identified as a powerful tool to increase transistor HCI lifetime under PA operation.
ISSN:1938-1891
DOI:10.1109/IRPS48228.2024.10529462