Solar-Blind Ultraviolet Anisotropic Polarization Detection by β-Ga₂O₃ Based Schottky Photodiodes

\beta -Ga2O3 is expected to achieve polarization detection in the solar-blind ultraviolet due to its ultra-broad bandgap and anisotropic crystal structure. In this work, we theoretically analyze the physical mechanism of \beta -Ga2O3 to achieve polarization detection from the probabilities of elect...

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Bibliographic Details
Published in:IEEE electron device letters 2024-07, Vol.45 (7), p.1153-1156
Main Authors: Long, Haoran, Xiong, Tao, Hu, Jianwen, He, Kexin, Liu, Yueyang, Yang, Juehan, Wei, Zhongming
Format: Article
Language:English
Subjects:
Anisotropic
Crystal structure
Crystals
Detectors
Electrodes
Electron transitions
Gallium oxides
Photoconductivity
Photodiodes
Photoelectric effect
Photonic band gap
Polarization
polarization photodetection
Schottky photodiode
solar-blind
β-Ga₂O
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Summary:\beta -Ga2O3 is expected to achieve polarization detection in the solar-blind ultraviolet due to its ultra-broad bandgap and anisotropic crystal structure. In this work, we theoretically analyze the physical mechanism of \beta -Ga2O3 to achieve polarization detection from the probabilities of electron transition. The (010) \beta -Ga2O3 photodetector with a Schottky photodiode structure has a maximum responsivity of 1.1 A/W and a detective rate of {3}.{08}\times {10} ^{{12}} Jones. The polarization detection performance of different crystalline planes was compared, and the polarization sensitivity of the (001) surface is stronger, with an anisotropic polarized photocurrent ratio (PR) of 5.8. This work is expected to contribute to the further development of \beta -Ga2O3 solar-blind ultraviolet polarization detectors.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3400969