Effect of poling voltage on electro-optic response of epitaxial BaTiO3 on Si grown by sputtering

Optical-grade BaTiO 3 has been epitaxially integrated on silicon wafers by off-axis sputtering. We find that for films with in-plane ferroelectric polarization, the as-grown domain structure results in an initially reduced effective electrooptic response that can be "woken up" by sufficien...

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Bibliographic Details
Main Authors: Posadas, A. B., Wilson, A. B., Demkov, A. A.
Format: Conference Proceeding
Language:English
Subjects:
barium titanate
electro-optic
Epitaxial growth
Integrated optics
Optical films
Optical polarization
Pockels effect
poling
Silicon photonics
Titanium compounds
Voltage
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Summary:Optical-grade BaTiO 3 has been epitaxially integrated on silicon wafers by off-axis sputtering. We find that for films with in-plane ferroelectric polarization, the as-grown domain structure results in an initially reduced effective electrooptic response that can be "woken up" by sufficient poling.
ISSN:1949-209X
DOI:10.1109/SiPhotonics60897.2024.10543821