Process Control Solutions for GaN-on-Si Devices in a Production Line

Our paper will present defect control solutions for manufacturing Gallium Nitride (GaN) devices in a silicon production line. The flexibility of defect inspection and review tools allowed us to successfully implement a full defectivity control plan for both silicon and GaN-on-Si wafers. In addition,...

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Bibliographic Details
Main Authors: Carboni, Francesco F., Perego, Luca M., Czeppel, Laura T., Capelli, Daniele, Moio, Bruno, Adamo, Costanza, Bollin, Maddalena, Barbisan, Luca, Bellando, Francesco, Salamone, Matteo M., Sharma, Parikshit, Parisi, Paolo, Deepak, Shruti, Dayyala, Manoj K.
Format: Conference Proceeding
Language:English
Subjects:
control plan
eBeam review
Economics
GaN on Si
HEMT
Inspection
killer defect
pGaN residues
Process control
Production
Reviews
Semiconductor device manufacture
Silicon
wafer map metrics
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Summary:Our paper will present defect control solutions for manufacturing Gallium Nitride (GaN) devices in a silicon production line. The flexibility of defect inspection and review tools allowed us to successfully implement a full defectivity control plan for both silicon and GaN-on-Si wafers. In addition, two novel methods were employed for the detection of a GaN-specific defect. First, SEM review equipment was used as an inspection tool to detect and enumerate the number of killer defects and second, the intensity output of an inspection system was utilized for high-speed mapping of the overall defectivity on a wafer.
ISSN:2376-6697
DOI:10.1109/ASMC61125.2024.10545449