Design of Fully Integrated GaN Dual-Band Doherty Power Amplifier for 5G Wireless Communication

The current study introduces the design and sim-ulation of a comprehensively integrated dual-band Doherty power amplifier (DPA), which employs Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology for its fabrication. A specialized output matching network is designed for the carr...

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Bibliographic Details
Main Authors: Liu, Shuang, Gao, Ruibin, Dai, Zhijiang, Shi, Weimin, Li, Mingyu, Pang, Jingzhou
Format: Conference Proceeding
Language:English
Subjects:
Doherty Power amplifier (DPA)
Dual band
fully integrated
Gallium Nitride (GaN)
HEMTs
High Electron Mobility Transistor (HEMT)
Impedance matching
Power amplifiers
Simulation
Transistors
Wireless communication
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Summary:The current study introduces the design and sim-ulation of a comprehensively integrated dual-band Doherty power amplifier (DPA), which employs Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology for its fabrication. A specialized output matching network is designed for the carrier path to achieve dual-band Doherty operation. The overall circuit consists of a Wilkinson power divider, input matching networks, active devices and an output matching network and a phase shifter, all integrated onto a chip with a dimension of 2.60\times 3.05mm^{2} . The fabricated DPA demonstrates operation at 3.5 GHz and 4.85 GHz with 6 dB high-efficiency power range. Following electromagnetic(EM) simulation, the designed DPA achieves a output back-off (OBO) drain efficiency exceeding 42%, a saturated drain efficiency exceeding 53%, and a peak output power of 37.5 dBm.
ISSN:2694-2968
DOI:10.1109/GSMM61775.2024.10553139