FS2K: A Forksheet FET Technology Library and a Study of VLSI Prediction for 2nm and Beyond

• Main Authors: Shin, Yunjeong, Park, Daehyeok, Koh, Dohun, Heo, Dongryul, Park, Jieun, Lee, Hyundong, Kim, Jongbeom, Lee, Hyunsoo, Song, Taigon
• Format: Conference Proceeding
• Language: English
• Subjects: Field effect transistors; FSFET; Layout; Libraries; Library; NSFET; Performance evaluation; Process design; Standard cell; Very large scale integration; Visualization
• ISSN: 2158-1525
• DOI: 10.1109/ISCAS58744.2024.10558224

The semiconductor foundries are now mass-producing 3nm transistors. In this trend, many studies on 2nm node report the potential of future transistors such as forksheet FET (FSFET) from the device perspective. However, only a few studies report the impact of advanced transistors at the full-chip level. Thus, this study focuses on enlightening the potential of FSFET at the full-chip level in the 2nm process compared to the 3nm node currently in mass production. To do this, we present FS2K, the first public 2nm technology library in FSFET, which provides the following results: 1) The simple scaling with no variation in devices or interconnect achieves only about 10% power reduction and area reduction in 2nm processes for FSFET and Nanoshet FET (NSFET). 2) An optimal performance improvement in a 2nm node requires FSFET to be designed in a 4T standard cell that is 1-track reduced from 3nm. Our 2nm 4T-FSFET design achieves -29.5% area reduction and -31.9% power reduction compared to the existing 3nm process. Thus, we emphasize the importance of optimization not only in the device but also in the cell layout for future processes.