D2W Hybrid Bonding System Achieving High-Accuracy and High-Throughput With Minimal Configurations

The effectiveness of a new D2W hybrid bonder achieving 2200 UPH and 100-nm alignment accuracy is validated based on the fact that multiple chips are bonded even when the duration after plasma activation is fixed. Our hybrid bonding is characterized using Positron Annihilation Spectroscopy (PAS), Dou...

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Bibliographic Details
Main Authors: Mihara, Kentaro, Hare, Takashi, Sakai, Hirofumi, Aoki, Shimpei, Terada, Toyoharu, Murugesan, Mariappan, Hashimoto, Hiryuki, Kino, Hisashi, Tanaka, Tetsu, Fukushima, Takafumi, Inoue, Fumihiro, Uedono, Akira
Format: Conference Proceeding
Language:English
Subjects:
Accuracy
D2W hybrid bonding
DCBM
Electronic components
H 2 O plasma
high-accuracy
high-throughput
Kelvin
Particle beams
PAS
Plasma properties
Positrons
Spectroscopy
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Summary:The effectiveness of a new D2W hybrid bonder achieving 2200 UPH and 100-nm alignment accuracy is validated based on the fact that multiple chips are bonded even when the duration after plasma activation is fixed. Our hybrid bonding is characterized using Positron Annihilation Spectroscopy (PAS), Double Canti-lever Beam Method (DCBM) test, and TEG chips with Kelvin patterns to evaluate the electrical properties of Cu-Cu single joints/daisy chains. We confirm that excellent electrical properties are obtained from optimized Cu-CMP, pretreatment processes, including dicing, cleaning and plasma activation, and bonding conditions.
ISSN:2377-5726
DOI:10.1109/ECTC51529.2024.00074