High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects

• Main Authors: Mo, Weiye, Ye, Jun, Liu, Haonan, Xiao, Xuan, Song, Yang, Huang, Wei, Wang, Tao, Zhang, Debin, Zhang, David. Wei
• Format: Conference Proceeding
• Language: English
• Subjects: Capacitance; Capacitance-voltage characteristics; Degradation; MOSFET; Radiation effects; radiation hardening; Radiation hardening (electronics); SGT MOSFET; Split gate flash memory cells; Total-Ionizing-Dose effects
• ISSN: 1946-0201
• DOI: 10.1109/ISPSD59661.2024.10579605

In this paper, a novel radiation-hardened SGT(N-SGT) is firstly developed by employing a specialized Total-Ionizing-Dose radiation hardening process and the radiation degradation model is proposed. At the TID dose of 100 krad (Si), the \vert \Delta V_{th}\vert of N-SGT is only 0.16 V, reduced by 87.7%, and it's BV is 32.5V, increased by 44.4% compare with Conventional-SGT. To evaluate the radiation damage on oxide layer, the irradiated induced charges, including Q_{GOX},Q_{IPOX} and Q_{TROX} , has been extracted by T-CAD. Due to lower irradiated induced Q_{GOX}, Q_{IPOX} and Q_{TROX} in N-SGT, the channel depletion and DIBL effect are weakened, and the charge imbalance is alleviated. The lower proportion of Q_{IPOX}:Q_{TROX} (1:3) in N-SGT improved the tolerance to the irradiated charge. In addition, this paper firstly reveals that the C_{gd} of C-SGT significantly increases after irradiation, due to the impact of Q_{IPOX} and Q_{GOX} on channel depletion and charge imbalance. Fortunately, N-SGT has more stable capacitance characteristics after irradiation and achieves a good trade-off.